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| (R) STTH1506TPI Tandem 600V Hyperfast Rectifer MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 15 A 600 V (in series) 150 C 2.6 V 4.8 A 1 2 3 1 FEATURES AND BENEFITS Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink. Matched diodes for typical PFC application without need for voltage balance network. C = 7pF s s s s s s 2 3 TOP3I (insulated) DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 26 130 -65 +150 + 150 Unit V A A C C TM: TURBOSWITCH is a trademark of STMicroelectronics May 2002 - Ed: 1A 1/5 STTH1506TPI THERMAL AND POWER DATA Symbol Rth (j-c) Rth (c) Rth (j-c) P1 Junction to case Conduction power dissipation for both diodes Parameter Junction to case Test conditions Per diode Coupling Total IF(AV) = 15 A Tc = 70C = 0.5 Value 2.9 0.3 1.6 50 W Unit C/W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25C Tj = 125C IF = 15 A Tj = 25C Tj = 125C Pulse test: * tp = 5ms, < 2% ** tp = 380s, < 2% Min. Typ. Max. 20 Unit A 30 200 3.6 V VF** 2.1 2.6 To evaluate the maximum conduction losses use the following equation: P = 1.8 x IF(AV) + 0.053 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Tests Conditions IF = 0.5 A Irr = 0.25A IR = 1 A IF = 1 A dIF/dt = - 50A/s VR = 30 V IRM Sfactor Reverse recovery current VR = 400 V IF = 15 A dIF/dt = -200 A/s Tj = 125C 4.8 0.4 Tj = 25C Min. Typ. 16 35 6.0 A Max. Unit ns TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Forward recovery time Forward recovery voltage Tests Conditions IF = 15 A dIF/dt = 100A/s, VFR = 1.1 x VFmax IF = 15 A dIF/dt = 100 A/s Tj = 25C Tj = 25C Min. Typ. Max. 200 6 Unit ns V 2/5 STTH1506TPI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) = 0.1 = 0.05 =1 = 0.2 P(W) 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 T 130 = 0.5 120 110 100 90 80 70 60 50 40 30 20 tp Tj=25C (Maximum values) Tj=125C (Typical values) Tjj=125C (Maximum values) (Maximum values) IF(AV)(A) =tp/T 10 0 0 1 2 3 VFM(V) 4 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse = 0.2 = 0.1 = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) IF=2 x IF(AV) VR=400V Tj=125C IF=IF(AV) 22 20 18 16 14 12 IF=0.5 x IF(AV) IF=0.25 x IF(AV) 10 8 T 6 4 0.1 0.0 1.E-03 tp(s) 1.E-02 1.E-01 =tp/T tp 2 0 0 200 dIF/dt(A/s) 400 600 800 1000 1.E+00 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 100 90 80 70 60 50 40 30 20 10 0 0 200 400 600 800 1000 IF=IF(AV) IF=0.5 x IF(AV) IF=2 x IF(AV) VR=400V Tj=125C Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 350 VR=400V Tj=125C 300 250 200 150 100 50 IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) dIF/dt(A/s) 0 0 200 dIF/dt(A/s) 400 600 800 1000 3/5 STTH1506TPI Fig. 7: Softness factor versus dIF/dt (typical values). S factor 0.80 IF=IF(AV) VR=400V Tj=125C Fig. 8: Relative variations of dynamic parameters versus junction temperature. 2.50 2.25 2.00 1.75 IF=IF(AV) VR=400V Reference: Tj=125C 0.70 S factor 0.60 1.50 1.25 1.00 0.50 0.40 0.75 0.50 IRM 0.30 0.25 Tj(C) 25 50 75 100 125 dIF/dt(A/s) 0.20 0 200 400 600 800 1000 0.00 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 16 IF=IF(AV) Tj=125C Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 400 350 300 250 200 150 100 IF=IF(AV) VFR=1.1 x VF max. Tj=125C 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) 50 0 0 100 dIF/dt(A/s) 200 300 400 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz VOSC=30mV Tj=25C 100 VR(V) 10 1 10 100 1000 4/5 STTH1506TPI PACKAGE MECHANICAL DATA TOP3I DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A B C D E F G H J K L P R 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 4.60 4.6 0.173 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055 0.181 1.55 0.057 15.60 0.565 0.7 2.9 0.020 0.106 16.5 0.622 21.1 0.815 15.5 0.594 5.65 0.213 3.65 0.134 4.17 0.161 1.40 0.047 Ordering code STTH1506TPI s Marking STTH1506TPI Package TOP3I Weight 4.46 g. Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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